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IRF530S, SiHF530S
Vishay Siliconix
1400
1200
V GS = 0 V, f = 1 MHz
C iss = C gs + C gd , C ds Shorted
C rss = C gd
1000
800
600
C oss = C ds + C gd
C iss
C oss
10 1
175 ° C
25 ° C
400
200
C rss
10 0
V GS = 0 V
0
10 0
10 1
0.4
0.8
1.2
1.6
2.0
91020_05
V DS, Drain-to-Source Voltage (V)
91020_07
V SD , Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I D = 14 A
10 3
5
16
12
8
V DS = 80 V
V DS = 50 V
V DS = 20 V
2
10 2
5
2
10
5
2
Operation in this area limited
by R DS(on)
10 μs
100 μs
1 ms
10 ms
4
0
0
5
10
15
For test circuit
see figure 13
20 25
1
5
2
0.1
0.1
2
5
1
2
T C = 25 ° C
T J = 175 ° C
Single Pulse
5 2
10
5
10 2
2
5
10 3
91020_06
Q G , Total Gate Charge (nC)
91020_08
V DS , Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Fig. 8 - Maximum Safe Operating Area
Document Number: 91020
S11-1046-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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